Interfacing semiconducting nanostructures with conducting or insulating substrates to attain a three-dimensional (3D) integrated platform is highly desirable for advanced nanoscale electronics and optoelectronics applications. As such, the assembly and synthesis of these nanostructures, which demonstrate multiple dimensionality, using a bottom-up approach would be useful. In this example, 1D ZnO nanowires about 80nm in diameter grow vertically out of the junctions of 80nm thick ZnO nanowalls.
Source: Hou Tee Ng
Original post by Ryan Munden at http://www.nanopicoftheday.org/
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